Development of Low-Vgs N-LDMOS Structure with Double Gate Oxide for Improving Rsp
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چکیده
منابع مشابه
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ژورنال
عنوان ژورنال: Transactions on Electrical and Electronic Materials
سال: 2009
ISSN: 1229-7607
DOI: 10.4313/teem.2009.10.6.193